(China (Mainland))
Product Summary
The 2N3209 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA.
Parametrics
2N3209 absolute maximum ratings: (1)collector-base voltage: -20 V; (2)collector-emitter voltage (VBE=0): -20 V; (3)collector-emitter voltage (IB=0): -20 V; (4)emitter-base voltage: -4 V; (5)collector current: -200 mA; (6)total power dissipation: 0.36 W at Tamb≤25℃; (7)storage and junction temperature: -65 to 200℃.
Features
2N3209 electrical characteristics: (1)collector cuto current (IE=0): -10 μA; (2)collector cuto current (VBE=0): -80 nA; (3)collector-base breakdown voltage (IE=0): -12 V; (4)collector-emitter breakdown voltage (VBE=0): -12 V; (5)collector-emitter breakdown voltage (IB=0): -12 V; (6)emitter-base breakdown voltage (IC=0): -4 V.
Diagrams
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 2N3209DCSM |
Other |
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Data Sheet |
Negotiable |
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2N3209CSM |
Other |
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Data Sheet |
Negotiable |
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2N3209 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Hi-Spd Sw |
Data Sheet |
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