Product Summary

The 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. It is suitable for 10 to 14 watts output power amplifiers in VHF band mobile radio applications.

Parametrics

2SC1972 absolute maximum ratings: (1)VCBO, collector base voltage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter voltage: 17V; (4)IC, collector current: 3.5A; (5)PC, collector dissipation: 1.5W when Ta=25℃; 25W when Tc=25℃; (6)Tj, junction temperature: 175℃; (7)Tstg, storage temperature: -55 to 175℃; (8)Rth-a, thermal resistance, junction to ambient: 100℃/W; (9)Rth-c, thermal resistance, junction to case: 6℃/W.

Features

2SC1972 features: (1)high power gain: Gpe≥7.5dB @ VCC=13.5V, Po=14W, f=175MHz; (2)emitter ballasted construction, gold metallization for high reliability and good performances; (3)TP-220 package similar is combinient for mounting; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=18W, f=175MHz.

Diagrams

2SC1972 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC1972
2SC1972

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC1004
2SC1004

Other


Data Sheet

Negotiable 
2SC1008
2SC1008

Other


Data Sheet

Negotiable 
2SC1027
2SC1027

Other


Data Sheet

Negotiable 
2SC1030
2SC1030

Other


Data Sheet

Negotiable 
2SC1034
2SC1034

Other


Data Sheet

Negotiable 
2SC1046
2SC1046

Other


Data Sheet

Negotiable